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BP_5 Monolayer with Multiferroicity and Negative Poisson's Ratio: A Prediction by Global Optimization Method

机译:具有多铁性和负泊松比的Bp_5单层:a   全局优化方法预测

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摘要

Based on variable components global optimization algorithm, we predict astable two-dimensional (2D) phase of boron phosphide with 1:5 stoichiometry,i.e. boron pentaphosphide (BP_5) monolayer, which has a lower formation energythan that of the commonly believed graphitic phase (g-BP). BP_5 monolayer is amultiferroic material with coupled ferroelasticity and ferroelectricity. Thepredicted reversible strain is up to 41.41%, which is the largest among allreported ferroelastic materials. Due to the non-centrosymmetric structure andelectronegativity differences between boron and phosphorus atoms, an in-planespontaneous polarization of 326.0 pC/m occurs in BP_5. Moreover, the recentlyhunted negative Poisson's ratio property, is also observed in BP_5. As anindirect semiconductor with a band gap of 1.34 eV, BP_5 displays outstandingoptical and electronic properties, for instance strongly anisotropicvisible-light absorption and high carrier mobility. The rich and extraordinaryproperties of BP_5 make it a potential nanomaterial for designingelectromechanical or optoelectronic devices, such as nonvolatile memory withconveniently readable/writeable capability. Finally, we demonstrate that AlN(010) surface could be a suitable substrate for epitaxy growth of BP_5monolayer.
机译:基于可变成分全局优化算法,我们预测了化学计量比为1:5的磷化硼的稳定二维(2D)相。五磷酸硼(BP_5)单层,其形成能比通常认为的石墨相(g-BP)低。 BP_5单层是具有铁弹性和铁电耦合的多铁性材料。预测的可逆应变高达41.41%,是所有报告的铁弹性材料中最大的。由于硼和磷原子之间的非中心对称结构和电负性差异,BP_5中发生了326.0 pC / m的面内自发极化。此外,在BP_5中也观察到了最近获得的负泊松比性质。作为带隙为1.34 eV的间接半导体,BP_5显示出出色的光学和电子特性,例如强各向异性的可见光吸收和高载流子迁移率。 BP_5的丰富和非凡性能使其成为设计机电或光电设备(例如具有便捷的可读写功能的非易失性存储器)的潜在纳米材料。最后,我们证明AlN(010)表面可能是BP_5单层外延生长的合适衬底。

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